Products

GaN Power Amplifiers

The GaN Power Amplifiers are some of the most popular and best candidates for output power from CW 2W to 200W or pulsed 100w to 1kW.

Advantages compared to the GaAs, Bi-polar, & LDMOS transistors:

High power density
Higher efficiency
Smaller size & weight
Wide bandwidth
Reduced cost/watt

Suitable for TWT replacement, IPA, driver amplifier, transmitter, radar, EW, RPV, UAV, point-to-point, and datalink communications.

These units are ideally suited for commercial, industrial, and military applications which require linearity, good performance, high reliability, and output power from 0.5W to 40W.

These amplifiers are high performance, low-cost, GaAs FET amplifiers. They have low noise figure, wide frequency range. They come with sealed aluminum packages, which are suitable for military and communication applications.

These units are ideal for commercial and industrial applications that require low maintenance, good performance, and high reliability. They are most suitable for TWT replacement, driver amplifiers, transmitters, ground stations, and point-to-point communication requirements. Any amplifier can be supplied in a rack-mount configuration. Contact Kratos Microwave U.S. with your specialized application requirements.

To meet customers’ special needs, such subsystems may consist of integration of the following microwave components: Detectors, Couplers, Power Dividers, Attenuators, Limiters, Switches, Filters, Mixers, Low-noise Amplifiers, Amplifier Gain Blocks, High Power Amplifiers, Oscillators, Phase Shifters,, Gain/Phase Equalizers, etc.

Setting us apart from other amplifier manufacturers is our unique spectrum of Custom Engineered Options (CEOs) that can be readily integrated within most package formats. These options are available on all of our standard amplifier products. Contact Kratos Microwave U.S. for your specific application requirements.