Products

GaN Power Amplifiers

Kratos has an extensive portfolio of GaN power amplifiers with power levels ranging from 300W CW to 2kW pulsed up to 40 GHz and power levels range from 2W to 50W up to 100 GHz for aerospace, defense, and instrumentation customers. Kratos GaN products support radar, EW, and communications applications meeting mission specific electrical and environmental requirements.

These units are ideally suited for commercial, industrial, and military applications which require linearity, good performance, high reliability, and output power from 0.5W to 40W.

These amplifiers are high performance, low-cost, GaAs FET amplifiers. They have low noise figure, wide frequency range. They come with sealed aluminum packages, which are suitable for military and communication applications.

These units are ideal for commercial and industrial applications that require low maintenance, good performance, and high reliability. They are most suitable for TWT replacement, driver amplifiers, transmitters, ground stations, and point-to-point communication requirements. Any amplifier can be supplied in a rack-mount configuration. Contact Kratos Microwave U.S. with your specialized application requirements.

To meet customers’ special needs, such subsystems may consist of integration of the following microwave components: Detectors, Couplers, Power Dividers, Attenuators, Limiters, Switches, Filters, Mixers, Low-noise Amplifiers, Amplifier Gain Blocks, High Power Amplifiers, Oscillators, Phase Shifters,, Gain/Phase Equalizers, etc.

Kratos specializes in design and manufacture of customer microwave solutions with industry leading SWAP-C. Design and construction includes SMT, hybrid chip and wire, HTCC and mixed signal technologies. Contact Kratos Microwave with your specification requirements.