Temperature Compensated Amplifiers
100 MHz to 18 GHz

► Solid-State Designs
► Frequency Coverage from 100 MHz to 18 GHz
► -54°C to +85C
► MIC Thin-Film Design for High Reliability
► Optimum Compensation Techniques
► Custom Designs Available


For applications where normal amplifier gain variations as a function of environmental temperature range exceed the allowable system limits. CTT offers amplifier designs whose gain variations have been reduced to one half that of uncompensated designs.
CTT Utilizes two techniques for compensating for gain variations:
• Integrating a PIN diode attenuator or FET (field-effect transistor)
• Bias current compensation
In the first approach, the control current of a PIN diode attenuator is automatically decreased by means of a thermistor so that at high temperatures there is less attenuation. This compensates for the decreased gain due to an increase in ambient temperature. The attenuator is placed between the gain stages of the amplifiers so that noise figure and output power performance is minimally degraded.
In the second approach, the FET itself is compensated. In regions of low bias current, the FET gain is proportional to the current. The FET bias current is automatically increased by means of a thermistor at high temperatures to increase the gain, in order to compensate for a decrease in gain as a result of the increase in the ambient temperature.
Temp Comp Amplifier Comments:
1. Maximum input power level will be +17 dBm CW. +20 dBm optional.
2. 0.32 inches thick flat package is optional.
3. SMA female connectors are standard.
4. All units contain built-in voltage regulator and reverse voltage protection diode.
5. Consult the factory for any special gain, noise figure, power, voltage, etc.