GaN Power Amplifiers
Up to 40 Watts
Frequency Coverage: 2.0 to 18.0 GHz



    • Designed for Military, Industrial and Communications Applications
    • Optimized Thermal Design
    • Automatic Thermal Shutdown
    • Replacements for TWTs in CW and Pulsed Applications
    • Custom Designs Available
    • Available in Rack-Mount Configuration

Narrowband Amplifiers Up to 100 Watts High & Medium Power Amplifiers
CTT’s GaN power amplifiers are configured specifically for high output power, small size and high operating temperature range. The design of this family of power amplifiers has evolved from CTT’s long experience in MIC technology, in combination with the utilization of the latest available GaN power output devices. High power density and junction temperature of GaN devices make them the best choice for many defense electronics as well as commercial applications. They are suitable for UAV, Radar, and as replacements for TWTs in CW and Pulsed applications.

The specifications listed (AGM, AGX, AGW Series) are average or continuous-wave (CW) power ratings, and these amplifiers can be used for pulsed signal applications as well, with higher output-power ratings. Engineered specifically to meet the stringent requirements imposed by many modern radar designs, CTT’s family of GaN-based power amplifiers (AGN and AGW Series), perform a wide range of functions. Whether the radar is narrowband, wideband or ultra-wideband, operating in pulsed or CW mode, CTT’s GaN power amplifiers are an especially attractive choice for new multifunction radar systems that effectively conserve weight, space and power consumption though the combination of several stand-alone radars into a single system.

All CTT’s GaN amplifiers undergo a 24-hour burn-in period and thorough screening to ensure reliability. Specifications listed are guaranteed at 25°C. Units operate from -55 to +85°C.

CTT engineers have developed a proprietary open architecture/common platform of these GaN-based power amplifiers which relies on advanced coupler design and unique substrate material selection. The result is a selection of adaptable, modular amplifiers requiring only a single supply voltage. Both military and commercial configurations can benefit from improvements in: Increased Sensitivity, Reduced Size and Weight, Higher Efficiency, Wider Bandwidth, Reduced Cost, and System Power Efficiency.



New GaN Power Amplifiers



New Products appear in BOLD type
      Psat Current Current
  Gain Flatness N.F. Psat (dBm) VSWR Vdc (mA) (mA)   Request
MODEL NUMBER Freq (dB) (±dB) (dB) (dBm) Band Edge In/Out Volts @SSG @Psat  Case For
  GHX Min Max Max Typ Min Max   Typ Typ   Quote

AGM/060-4343 2.0-6.0 43 2.50 6.0 43 43.0 2.0:1 30 1820 4200 NDS12 RFQ
AGM/060-4356 2.0-6.0 56 2.50 6.0 43 43.0 2.0:1 30 1880 4260 NDS12 RFQ
AGM/060-4646 2.0-6.0 46 2.50 6.0 46 45.5 2.0:1 30 3420 7700 NDS12 RFQ

AGX/0218-3946 2.0-18.0 46 3.00 8.0 39 38.0 2.2:1 32 1350 3100 NGX15 RFQ

AGM/180-3940 6.0-18.0 40 2.50 7.0 39 38.0 2.0:1 32 1300 3100 NGX15 RFQ
AGM/180-4250 6.0-18.0 50 2.50 7.0 42 41.0 2.0:1 32 2500 5200 NDX14 RFQ
AGM/180-4444 6.0-18.0 44 2.50 7.0 44 43.0 2.0:1 32 4000 8500 NQX14 RFQ
AGM/180-4458 6.0-18.0 58 2.50 7.0 44 43.0 2.0:1 32 4100 8600 NQX14 RFQ

AGW/105-4250 8.5-10.5 50 2.50 8.0 42 42.0 2.0:1 30 1600 3300 NGX15 RFQ
AGW/105-4550 8.5-10.5 50 2.50 8.0 45 45.0 2.0:1 30 2800 6100 NDX14 RFQ



Gain Noise Psat Current
Freq Gain Flatness Figure Psat CW VSWR Volts Psat Case Request
MODEL NUMBER (GHz) (dB) (±dB) (dB) (+dBm) (Watts) In/Out (DC) (mA) Outline For
  Min Min Max Max Min Max Max Typ Typ   Quote

AGN/093-4652-P 8.5-9.3 52 2.00 6.0 46 40.0 2.0:1 30 7000 NDX14 RFQ
AGN/093-4957-P 8.5-9.3 57 2.00 6.0 49 80.0 2.0:1 30 13800 NQX14 RFQ
AGN/093-5260-P 8.5-9.3 60 2.00 6.0 52 160.0 2.0:1 30 27000 SP RFQ

AGN/099-4652-P 9.0-9.9 52 2.00 6.0 46 40.0 2.0:1 30 7000 NDX14 RFQ
AGN/099-4957-P 9.0-9.9 57 2.00 6.0 49 80.0 2.0:1 30 13800 NQX14 RFQ
AGN/099-5260-P 9.0-9.9 60 2.00 6.0 52 160.0 2.0:1 30 27000 SP RFQ

AGN/105-4652-P 9.5-10.5 52 2.00 6.0 46 40.0 2.0:1 30 7000 NDX14 RFQ
AGN/105-4957-P 9.5-10.5 57 2.00 6.0 49 80.0 2.0:1 30 13800 NQX14 RFQ
AGN/105-5260-P 9.5-10.5 60 2.00 6.0 52 160.0 2.0:1 30 27000 SP RFQ

AGN/107-4652-P 9.9-10.7 52 2.00 6.0 46 40.0 2.0:1 30 7000 NDX14 RFQ
AGN/107-4957-P 9.9-10.7 57 2.00 6.0 49 80.0 2.0:1 30 13800 NQX14 RFQ
AGN/107-5260-P 9.9-10.7 60 2.00 6.0 52 160.0 2.0:1 30 27000 SP RFQ



Gain Noise Psat Current
Freq Gain Flatness Figure Psat CW VSWR Volts Psat Case Request
MODEL NUMBER (GHz) (dB) (±dB) (dB) (+dBm) (Watts) In/Out (DC) (mA) Outline For
  Min Min Max Max Min Max Max Typ Typ   Quote

AGW/085-3740 6.4-8.5 40 2.50 7.0 37 5.0 2.0:1 30 1300 NGX15 RFQ
AGW/085-4145 6.4-8.5 45 2.50 7.0 41 12.6 2.0:1 30 1930 NGX15 RFQ
AGW/085-4346 6.4-8.5 46 2.50 7.0 43 20.0 2.0:1 30 3800 NDX14 RFQ

AGW/110-3739 7.0-11.0 38 2.50 7.0 37 5.0 2.0:1 30 1100 NGX15 RFQ
AGW/110-4044 7.0-11.0 44 2.50 7.0 40 10.0 2.0:1 30 1950 NGX15 RFQ
AGW/110-4245 7.0-11.0 45 2.50 7.0 42 16.0 2.0:1 30 3800 NDX14 RFQ

AGW/107-3739 7.7-10.7 38 2.50 7.0 37 5.0 2.0:1 30 1100 NGX15 RFQ
AGW/107-4144 7.7-10.7 44 2.50 7.0 41 12.6 2.0:1 30 1950 NGX15 RFQ
AGW/107-4345 7.7-10.7 45 2.50 7.0 43 20.0 2.0:1 30 3800 NDX14 RFQ

AGW/105-3738 8.5-10.5 38 2.50 7.0 37 5.0 2.0:1 30 1300 NGX15 RFQ
AGW/105-4144 8.5-10.5 44 2.50 7.0 41 12.6 2.0:1 30 1930 NGX15 RFQ
AGW/105-4345 8.5-10.5 45 2.50 7.0 43 20.0 2.0:1 30 3800 NDX14 RFQ





GaN Power Amplifier Comments:

1. Units can operate at -30°C to +70°C. Proper heat sinking is required to keep the CASE temperature below +70°C, otherwise, permanent damage or degradation may occur. Consult the factory for higher temperature operational requirements.
2. All units contain internal voltage regulators.
3. For CW amplifiers TTL control, pulsed amplification, monitor, detector and DC-DC power supplies are optional.
4. The AGN-P pulse mode series can only operate at pulse mode, requiring an external TTL signal to turn On/Off the amplifier. The delay plus rise time, or delay plus fall time is less than 2 µS. Shorter response times are available, ie: 500 ns or faster.
5. Consult the factory for additional gain, power, frequencies, temperature compensation, special functions, or customer-specified supply voltages.
6. Detailed amplifier case outline drawings are available from CTT’s Website.
7. Specifications listed are subject to change without notice.
8. SP = Special Enclosure. Please contact the factory for outline drawing.